Ci Cluster
Tool
After years of development and testing, KDF's Ci platform brings cluster intelligence to compound semiconductor, MEMS, MOEMS, sensors, and advanced packaging production — in a cost-effective, configurable package built on 35+ years of KDF manufacturing expertise.
Modular by Design. Intelligent by Nature.
The Ci is KDF's cluster tool platform — a fundamentally different architecture from the in-line batch systems. Instead of a single chamber with multiple targets, the Ci uses a central Brooks Marathon Series vacuum handler to move wafers between dedicated process modules: sputter, etch, degas, and load/unload.
Both the four-sided and eight-sided configurations are populated based on the process requirements. Custom wafer carriers are supported, or the system can be configured for 4" to 8" wafers as ordered. The Ci is designed to outperform competing tools without the high cost of other OEMs.
The Ci S Sputter Module features KDF's unique rotating circular magnetron cathode — a 12-inch design providing high sputter rates, excellent target utilization, and superior uniformity. An optional stepper-driven rotating anode platen with PBN/PG backside heater achieves substrate temperatures up to 1000°C.
Standard System Features
- Four-sided and eight-sided handler configurations
- Brooks Marathon Series central vacuum handler
- Substrate sizes from 4" to 8" wafers — custom carriers available
- Up to 200mm substrate capability
- Modular process chambers — mix and match to application
- Ci S Sputter Module — 12" rotating circular magnetron, RF or DC
- Ci S Tri-Sput Module — three 3" sputter guns, dedicated RF per gun
- Ci D Degas Module — PBN/PG backside heater up to 1000°C
- Ci E Etch Module — KDF exclusive BMC etch cathode
- Single wafer entry load lock (R&D) or single/dual Brooks VCE (production)
- Rockwell PLC system with integrated brick PC across all modules
- Ethernet IP air manifold — all modules
- Full host of interlocks for system and personnel safety
- CTI cryo pump vacuum architecture throughout
Four-Sided Configuration
Compact footprint with four process module positions around the central handler. Ideal for targeted process flows — sputter + degas + etch + load/unload — where floor space is constrained or process steps are well-defined.
Eight-Sided Configuration
Full eight-position configuration for complex multi-step process flows. Supports multiple sputter modules, combined sputter + etch + degas sequences, and dual load/unload VCEs for maximum throughput in production environments.
Ci Module Library
Each Ci module is a self-contained process chamber — independently pumped, controlled, and interlocked — that connects to the central handler. The system is populated with modules as dictated by the process.
Sputter Module
Features KDF's unique 12" rotating circular magnetron cathode assembly — providing high sputter rates, excellent target utilization, and superior uniformity in RF or DC operation. An optional stepper-driven rotating anode platen with PBN/PG backside heater reaches substrate temperatures up to 1000°C.
- 12" Rotating Circular Magnetron Cathode — RF or DC operation
- SS chamber with quick-change shields
- MKS Pendulum throttling gate valve — up/downstream gas capable
- AE 10 kW DC supply standard
- Automatic shutter for pre-sputter and target clean modes
- MKS single gas MFC 200 sccm
- CTI 8F cryo pump — ACR, auto pump, auto vent
- Backside lift pin pedestal for wafer entry and extraction
- Plasma viewport assembly
- 24 VDC water valving with safety leak detectors
- MKS second and third gas channels
- AE Pinnacle Plus DC power supply
- AE Dressler 3 kW RF option (replaces DC supply)
- Heated platen anode up to 1000°C
- Rotating anode 0–60 rpm
- CTI Onboard cryo pumps
- RF bias operation
- Al shield kits for TiW deposition
Tri-Sput Module
Three 3-inch sputter guns, each with a dedicated 600W RF power supply — enabling simultaneous or sequential deposition from three independent target materials in a single chamber pass. Ideal for alloy depositions, barrier/seed stacks, and multi-layer processes requiring precise individual power control.
- Three 3" sputter guns — dedicated RF 600W supply per gun
- SS chamber with quick-change shields
- MKS Pendulum throttling gate valve — up/downstream gas capable
- Automatic shutter for pre-sputter and target clean modes
- MKS single gas MFC 200 sccm
- CTI 8F cryo pump — ACR, auto pump, auto vent
- Backside lift pin pedestal for wafer entry and extraction
- Plasma viewport assembly
- 24 VDC water valving with safety leak detectors
- MKS second and third gas channels
- Heated platen anode up to 1000°C
- Rotating anode 0–60 rpm
- CTI Onboard cryo pumps
- RF bias operation
- Al shield kits for TiW deposition
Degas Module
A compact aluminum chamber with PBN/PG backside heater capable of reaching substrate temperatures up to 1000°C — enabling thorough outgassing prior to deposition for the highest film purity and adhesion. Heater control via PWM phase control with PLC-performed PID.
- Compact aluminum chamber design
- Manual lift top plate with gas-assist cylinders
- PBN/PG backside heater element — up to 1000°C
- Heater control: PWM phase control, PLC PID
- CTI 8F cryo pump
- SS gate valve, SS rough/regen valves, Nupro vent valves
- MKS 999 RS485 combo gauge
- Ethernet IP air manifold
- Backside edge lift pin pedestal for wafer entry and extraction
Etch Module
Features KDF's exclusive BMC (Band Magnetron Cathode) etch design — delivering high-rate, low-damage ion bombardment of the substrate. Osaka mag-lev turbo pump provides ultra-clean process environment with dedicated dry pump backup.
- KDF exclusive BMC etch cathode — high rate, low damage
- SS chamber with water-cooled top plate and counter magnet assembly
- Osaka mag-lev turbo pump with dedicated dry pump backup
- CTI inline water pump (pre-turbo)
- MKS three-channel gas MFC system
- MKS Pendulum throttling gate valve
- Advanced Energy 3 kW RF power supply
- Automatic top plate hoist
- Backside edge lift pin pedestal for wafer entry and extraction
- 24 VDC water valving with safety leak detectors
- Heated platen anode up to 1000°C
- Rotating anode 0–60 rpm
Target Markets
Compound Semiconductors
MEMS & MOEMS
Defense & Sensors
Advanced Packaging
Optical Communications
Medical Devices
Nanotechnology
DWDM Components
Build Your Cluster Tool
The Ci is configured to your process — module selection, handler size, and substrate format are all specified to your application. Talk to a KDF process engineer or download the datasheet to start the conversation.
