KDF RELEASE 2002
High rate processes for deposition of dielectric films have been developed using DC reactive sputtering on scanning batch tools. A typical high rate process for the deposition of silicon dioxide films from a conductively doped silicon target would allow the formation of nearly one micron of SiO2 in fifteen minutes, as compared with nearly five hours when RF magnetron sputtered from a quartz target. This can represent a very large increase in throughput for the deposition of complex multilayer dielectric waveguides, mirrors or filters.
(Ref: Photonics Spectra, pp. 30-31, November 2002).
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