New High Rate DC Reactive Processes for Dielectric Films

KDF RELEASE 2002

High rate processes for deposition of dielectric films have been developed using DC reactive sputtering on scanning batch tools. A typical high rate process for the deposition of silicon dioxide films from a conductively doped silicon target would allow the formation of nearly one micron of SiO2 in fifteen minutes, as compared with nearly five hours when RF magnetron sputtered from a quartz target. This can represent a very large increase in throughput for the deposition of complex multilayer dielectric waveguides, mirrors or filters.

(Ref: Photonics Spectra, pp. 30-31, November 2002).

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About KDF
KDF Electronic & Vacuum Services, Inc., produces batch in-line sputtering tools in a wide variety of R&D and production formats for the mainstream silicon, emerging materials and flat-panel display markets. KDF systems are used in the production of semiconductors, photomasks, telecommunications networks, wireless circuits, gallium arsenide (GaAs), high density interconnect, sensors, optoelectronics, flat panel display and radio frequency power devices. KDF is located in Rockleigh, New Jersey, and has representatives in Europe, Japan, Taiwan, Singapore, Malaysia, China and Korea.
Company Contacts
Kurt Flechsig
President & CEO
Tel: +1 (201) 784-5005
E-mail: kurt@kdf.com
New High Rate DC Reactive Processes for Dielectric Films