KDF Sputtering Solutions KDF Sputtering Technology covers all sputtering applications ranging from hard coating and decoration to state-of-the microchips and medical applications. Linearly Moving Magnetron (LMM™) The LMM is a KDF proprietary design to achieve the challenging task of target full-face erosion. With the LMM technology, an oscillating magnet behind the target sweeps the plasma across the target to achieve a uniform full-face target erosion and high target utilization. The LMM cathode is by design a superior technology in terms of process stability and repeatability from run-to-run as well as over the target life-time. This, in turn, translates to higher productivity and cost savings for the customer. Planetary Rotating Pallet The planetary rotating pallet ERPP™ (enhanced rotating planetary pallet) is a KDF design to achieve exceptionally high uniformity in the sub 1%, as well as tight repeatability. (Ref: Vacuum Technology and Coating, December 2002). Related Article: Highly uniform dielectric films using a combined linear scanning, velocity profiling and planetary rotating motion This option can be used in all sputtering modes to achieve quality PVD thin films: – DC Magnetron Sputtering – RF Sputtering – Pulsed DC Sputtering – Reactive sputtering – HIPIMS Sputtering Down and Side sputtering KDF offers both Down and Side sputtering systems in different sizes and configuration with deposition area ranging from 12 x 12 inches to 26 x 30 inches area. Both configurations yield high quality PVD thin films in all sputtering modes: – DC Magnetron Sputtering – RF Sputtering – Pulsed DC Sputtering – Reactive Sputtering – HIPIMS Sputtering Metal and Dielectric sputtering KDF offers metal and dielectric sputtering for various substrate type and sizes, as well as Transparent Conductive Oxides (TCO’s) utilizing materials like ITO and ZnO. Dielectric Deposition at High-Metallic Rates High rate processes for deposition of dielectric films have been developed using Pulsed DC reactive sputtering on scanning batch tools. A typical high rate process for the deposition of silicon dioxide films from a conductively doped silicon target would allow the formation of nearly one micron of SiO2 in fifteen minutes, as compared with nearly five hours when RF magnetron sputtered from a quartz target. (Ref: Photonics Spectra, pp. 30-31, November 2002) High-vacuum Loadlock and a pre-heat All KDF systems can be equipped with a high-vacuum load lock and a pre-heat option to pre-treat the substrates prior to entering the deposition chamber.